Samsung Leads Semiconductor Paradigm Shift with New Material Discovery
July 7, 2020 | SamsungEstimated reading time: 1 minute
Researchers at the Samsung Advanced Institute of Technology (SAIT) have unveiled the discovery of a new material, called amorphous boron nitride (a-BN), in collaboration with Ulsan National Institute of Science and Technology (UNIST) and the University of Cambridge. Published in the journal Nature, the study has the potential to accelerate the advent of the next generation of semiconductors.
2D Materials – The Key to Overcoming Scalability Challenges
Recently, SAIT has been working on the research and development of two-dimensional (2D) materials – crystalline materials with a single layer of atoms. Specifically, the institute has been working on the research and development of graphene, and has achieved groundbreaking research outcomes in this area such as the development of a new graphene transistor as well as a novel method of producing large-area, single-crystal wafer-scale graphene. In addition to researching and developing graphene, SAIT has been working to accelerate the material’s commercialization.
“To enhance the compatibility of graphene with silicon-based semiconductor processes, wafer-scale graphene growth on semiconductor substrates should be implemented at a temperature lower than 400°C.” said Hyeon-Jin Shin, a graphene project leader and Principal Researcher at SAIT. “We are also continuously working to expand the applications of graphene beyond semiconductors.”
2D Material Transformed – Amorphous Boron Nitride
The newly discovered material, called amorphous boron nitride (a-BN), consists of boron and nitrogen atoms with an amorphous molecule structure. While amorphous boron nitride is derived from white graphene, which includes boron and nitrogen atoms arranged in a hexagonal structure, the molecular structure of a-BN in fact makes it uniquely distinctive from white graphene.
Amorphous boron nitride has a best-in-class ultra-low dielectric constant of 1.78 with strong electrical and mechanical properties, and can be used as an interconnect isolation material to minimize electrical interference. It was also demonstrated that the material can be grown on a wafer scale at a low temperature of just 400°C. Thus, amorphous boron nitride is expected to be widely applied to semiconductors such as DRAM and NAND solutions, and especially in next generation memory solutions for large-scale servers.
“Recently, interest in 2D materials and the new materials derived from them has been increasing. However, there are still many challenges in applying the materials to existing semiconductor processes.” said Seongjun Park, Vice President and Head of Inorganic Material Lab, SAIT. “We will continue to develop new materials to lead the semiconductor paradigm shift.”
Suggested Items
Real Time with... IPC APEX EXPO 2024: Sustainability in the Industry
04/26/2024 | Real Time with...IPC APEX EXPOGuest Editor Henry Crandall and Chris Nash of Indium Corporation discuss the company's 90th anniversary and its focus on sustainability. They focus on the benefits of sustainable materials, their compatibility, and value propositions. The conversation also highlights how Durafuse LT technology's role in reducing reflow temperatures is leading to significant cost and energy savings. Nash also touches on downstream sustainability efforts such as using recycled materials for packaging.
SMC Korea 2024 to Highlight Semiconductor Materials Trends and Innovations on Industry’s Path to $1 Trillion
04/24/2024 | SEMIWith Korea a major consumer of semiconductor materials and advanced materials a key driver of innovation on the industry’s path to $1 trillion, industry leaders and experts will gather at SMC (Strategic Materials Conference) Korea 2024 on May 29 at the Suwon Convention Center in Gyeonggi-do, South Korea to provide insights into the latest materials developments and trends. Registration is open.
Groundbreaking Ceremony Marks the Beginning of a New Era for Newccess Industrial; The Construction of the MINGXIN Building
04/12/2024 | Newccess IndustrialOn a clear and sunny day in March, the groundbreaking ceremony for the MINGXIN Building took place in Shenzhen, China. This moment marked the official commencement of construction for a project that will reshape the semiconductor materials industry.
The Need for a Holistic Global Sustainability Standard
04/10/2024 | Michael Ford, Aegis SoftwareNo one can deny that the resources of our fragile planet are finite. The environment seems like a third party, subject to constant degradation. We’re acutely aware of the effects of pollution on our climate, and despite our “throw-away” culture, recycling and recovery of materials has remained relatively expensive, even as we use more energy just to survive.
iNEMI Publishes Four Roadmap Topics
04/04/2024 | iNEMIThe International Electronics Manufacturing Initiative (iNEMI) announces the availability of the first roadmap topics in the new iNEMI Roadmap format. Printed circuit boards, sustainable electronics, smart manufacturing, and mmWave materials and test are now available online.